BAV99-T1 vs BAV99E6327 feature comparison

BAV99-T1 Sangdest Microelectronics (Nanjing) Co Ltd

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BAV99E6327 Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD INFINEON TECHNOLOGIES AG
Package Description R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown compliant
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 3 3
Output Current-Max 0.15 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.35 W 0.33 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 75 V 85 V
Reverse Recovery Time-Max 0.006 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 3
Pbfree Code Yes
Part Package Code SOT-23
Pin Count 3
ECCN Code EAR99
HTS Code 8541.10.00.70
Samacsys Manufacturer Infineon
Forward Voltage-Max (VF) 0.715 V
JESD-609 Code e3
Non-rep Pk Forward Current-Max 4.5 A
Number of Phases 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Reference Standard AEC-Q101
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 40

Compare BAV99-T1 with alternatives

Compare BAV99E6327 with alternatives