BAV99S,115
vs
BAV99S/DG,115
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NEXPERIA
|
NXP SEMICONDUCTORS
|
| Part Package Code |
TSSOP
|
TSSOP
|
| Package Description |
SC-88, 6 PIN
|
|
| Pin Count |
6
|
6
|
| Manufacturer Package Code |
SOT363
|
SOT363
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.70
|
|
| Date Of Intro |
1999-05-11
|
|
| Samacsys Manufacturer |
Nexperia
|
|
| Additional Feature |
LOW LEAKAGE CURRENT
|
|
| Application |
GENERAL PURPOSE
|
|
| Configuration |
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
0.715 V
|
| JESD-30 Code |
R-PDSO-G6
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
4 A
|
4 A
|
| Number of Elements |
4
|
|
| Number of Phases |
1
|
|
| Number of Terminals |
6
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Output Current-Max |
0.2 A
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Power Dissipation-Max |
0.25 W
|
0.25 W
|
| Reference Standard |
IEC-60134
|
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Current-Max |
50 µA
|
0.5 µA
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
| Reverse Test Voltage |
80 V
|
80 V
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
1
|
1
|
|
|
|
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Compare BAV99S/DG,115 with alternatives
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BAV99S/DG,115 vs BAV99S,125
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BAV99S/DG,115 vs BAV99S/ZL
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BAV99S/DG,115 vs CMKD7000