BAV99T116 vs 1SS250TE85L feature comparison

BAV99T116 ROHM Semiconductor

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1SS250TE85L Toshiba America Electronic Components

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ROHM CO LTD TOSHIBA CORP
Package Description R-PDSO-G3
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Samacsys Manufacturer ROHM Semiconductor
Additional Feature HIGH RELIABILITY
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 1.2 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e1
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 4 A 2 A
Number of Elements 2 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 125 °C
Output Current-Max 0.215 A 0.1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Power Dissipation-Max 0.3 W 0.15 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 85 V 250 V
Reverse Current-Max 0.1 µA 1 µA
Reverse Recovery Time-Max 0.004 µs 0.06 µs
Surface Mount YES YES
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 3
Number of Phases 1

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