BAW56 vs 1S2835-A feature comparison

BAW56 EIC Semiconductor Inc

Buy Now Datasheet

1S2835-A Renesas Electronics Corporation

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD RENESAS ELECTRONICS CORP
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C 125 °C
Output Current-Max 0.215 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Power Dissipation-Max 0.25 W
Rep Pk Reverse Voltage-Max 85 V 35 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Base Number Matches 64 2
Package Description R-PDSO-G3
Pin Count 3
Application GENERAL PURPOSE
Forward Voltage-Max (VF) 1.1 V
JESD-609 Code e6
Non-rep Pk Forward Current-Max 6 A
Operating Temperature-Min -55 °C
Qualification Status Not Qualified
Reverse Current-Max 0.1 µA
Reverse Test Voltage 30 V
Terminal Finish TIN BISMUTH

Compare BAW56 with alternatives

Compare 1S2835-A with alternatives