BCV62 vs BCV62C feature comparison

BCV62 Galaxy Microelectronics

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BCV62C NXP Semiconductors

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Part Life Cycle Code Active Transferred
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD NXP SEMICONDUCTORS
Package Description SOT-143, 4 PIN PLASTIC PACKAGE-4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 4.5 pF
Collector-Emitter Voltage-Max 30 V 30 V
Configuration COMMON BASE, 2 ELEMENTS CURRENT MIRROR
DC Current Gain-Min (hFE) 100 420
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 2 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.25 W
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz 100 MHz
VCEsat-Max 0.65 V 0.65 V
Base Number Matches 4 5
Pbfree Code Yes
Rohs Code Yes
Pin Count 4
Additional Feature FOR TRANSISTOR2 HFE IS 420
Case Connection COLLECTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30

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