BDW83C
vs
BDV65B
feature comparison
| Pbfree Code |
Yes
|
No
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
CENTRAL SEMICONDUCTOR CORP
|
| Part Package Code |
TO-218
|
|
| Package Description |
PLASTIC PACKAGE-3
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Samacsys Manufacturer |
STMicroelectronics
|
Central Semiconductor
|
| Collector Current-Max (IC) |
15 A
|
12 A
|
| Collector-Emitter Voltage-Max |
100 V
|
100 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
DARLINGTON
|
| DC Current Gain-Min (hFE) |
100
|
1000
|
| JEDEC-95 Code |
TO-218
|
TO-218
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
130 W
|
|
| Power Dissipation-Max (Abs) |
3.5 W
|
125 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Matte Tin (Sn)
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| VCEsat-Max |
4 V
|
|
| Base Number Matches |
1
|
2
|
| Case Connection |
|
COLLECTOR
|
| Transition Frequency-Nom (fT) |
|
60 MHz
|
|
|
|
Compare BDW83C with alternatives
Compare BDV65B with alternatives