BDX18
vs
2N3055ESMDR4
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
INTERSIL CORP
|
SEMELAB LTD
|
Package Description |
FLANGE MOUNT, O-MBFM-P2
|
CHIP CARRIER, R-CBCC-N3
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Case Connection |
COLLECTOR
|
COLLECTOR
|
Collector Current-Max (IC) |
15 A
|
15 A
|
Collector-Emitter Voltage-Max |
60 V
|
60 V
|
Configuration |
SINGLE
|
SINGLE
|
DC Current Gain-Min (hFE) |
20
|
20
|
JEDEC-95 Code |
TO-204AA
|
TO-276AB
|
JESD-30 Code |
O-MBFM-P2
|
R-CBCC-N3
|
JESD-609 Code |
e0
|
e4
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Temperature-Max |
200 °C
|
|
Package Body Material |
METAL
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
ROUND
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
CHIP CARRIER
|
Polarity/Channel Type |
PNP
|
NPN
|
Power Dissipation Ambient-Max |
115 W
|
|
Power Dissipation-Max (Abs) |
117 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
TIN LEAD
|
GOLD
|
Terminal Form |
PIN/PEG
|
NO LEAD
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
0.8 MHz
|
2.5 MHz
|
VCEsat-Max |
1.1 V
|
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
TO-276AB
|
Pin Count |
|
3
|
|
|
|
Compare BDX18 with alternatives
Compare 2N3055ESMDR4 with alternatives