BF1101WR,115
vs
BF1201WR
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
PHILIPS SEMICONDUCTORS
|
Package Description |
SMALL OUTLINE, R-PDSO-G4
|
|
Pin Count |
4
|
|
Manufacturer Package Code |
SOT343R
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.21.00.75
|
|
Samacsys Manufacturer |
NXP
|
|
Additional Feature |
LOW NOISE
|
|
Case Connection |
SOURCE
|
|
Configuration |
SINGLE
|
SINGLE
|
DS Breakdown Voltage-Min |
7 V
|
|
Drain Current-Max (ID) |
0.03 A
|
0.03 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
0.035 pF
|
|
Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
|
JESD-30 Code |
R-PDSO-G4
|
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
|
Operating Mode |
DUAL GATE, ENHANCEMENT MODE
|
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn)
|
MATTE TIN
|
Terminal Form |
GULL WING
|
|
Terminal Position |
DUAL
|
|
Time@Peak Reflow Temperature-Max (s) |
40
|
|
Transistor Application |
AMPLIFIER
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
1
|
2
|
Power Dissipation-Max (Abs) |
|
0.2 W
|
|
|
|
Compare BF1101WR,115 with alternatives