BF1201WR,115
vs
BF1201WR
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
PHILIPS SEMICONDUCTORS
|
| Pin Count |
4
|
|
| Manufacturer Package Code |
SOT343R
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.75
|
|
| Additional Feature |
LOW NOISE
|
|
| Case Connection |
SOURCE
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
10 V
|
|
| Drain Current-Max (ID) |
0.03 A
|
0.03 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
0.03 pF
|
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
|
| JESD-30 Code |
R-PDSO-G4
|
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
|
| Operating Mode |
DUAL GATE, ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.2 W
|
0.2 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
2
|
| Peak Reflow Temperature (Cel) |
|
260
|
|
|
|
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