BF199-AMMO
vs
BFT92
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SIEMENS A G
|
| Package Description |
CYLINDRICAL, O-PBCY-W3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.025 A
|
0.025 A
|
| Collector-Base Capacitance-Max |
0.5 pF
|
0.8 pF
|
| Collector-Emitter Voltage-Max |
25 V
|
15 V
|
| Configuration |
SINGLE
|
SINGLE
|
| JEDEC-95 Code |
TO-92
|
TO-236
|
| JESD-30 Code |
O-PBCY-W3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
PNP
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
GULL WING
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
550 MHz
|
5000 MHz
|
| Base Number Matches |
1
|
6
|
| Rohs Code |
|
No
|
| DC Current Gain-Min (hFE) |
|
20
|
| Highest Frequency Band |
|
L BAND
|
| JESD-609 Code |
|
e0
|
| Power Dissipation-Max (Abs) |
|
0.3 W
|
| Power Gain-Min (Gp) |
|
18 dB
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare BF199-AMMO with alternatives
Compare BFT92 with alternatives