BF495-T/R
vs
BF495
feature comparison
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
MICRO ELECTRONICS LTD
|
| Package Description |
CYLINDRICAL, O-PBCY-T3
|
CYLINDRICAL, O-PBCY-W3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW NOISE
|
|
| Collector Current-Max (IC) |
0.03 A
|
0.03 A
|
| Collector-Base Capacitance-Max |
1 pF
|
0.85 pF
|
| Collector-Emitter Voltage-Max |
20 V
|
20 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
35
|
36
|
| JEDEC-95 Code |
TO-92
|
TO-92
|
| JESD-30 Code |
O-PBCY-T3
|
O-PBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
120 MHz
|
200 MHz
|
| Base Number Matches |
1
|
1
|
| Highest Frequency Band |
|
VERY HIGH FREQUENCY BAND
|
| Operating Temperature-Min |
|
-55 °C
|
| Power Dissipation-Max (Abs) |
|
0.3 W
|
|
|
|
Compare BF495-T/R with alternatives
Compare BF495 with alternatives