BF510-TAPE-13 vs BF510 feature comparison

BF510-TAPE-13 NXP Semiconductors

Buy Now Datasheet

BF510 North American Philips Discrete Products Div

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.03 A
FET Technology JUNCTION JUNCTION
Feedback Cap-Max (Crss) 0.4 pF
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Base Number Matches 1 4
Rohs Code No
JESD-609 Code e0
Power Dissipation-Max (Abs) 0.25 W
Terminal Finish Tin/Lead (Sn/Pb)

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