BFG35,115
vs
BFG35
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
|
| Part Package Code |
SC-73
|
|
| Package Description |
PLASTIC, SOT-223, 4 PIN
|
,
|
| Pin Count |
4
|
|
| Manufacturer Package Code |
SOT223
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00
|
|
| Date Of Intro |
1992-11-01
|
|
| Samacsys Manufacturer |
NXP
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.15 A
|
0.15 A
|
| Collector-Emitter Voltage-Max |
18 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
25
|
25
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
|
| JESD-30 Code |
R-PDSO-G4
|
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
1 W
|
|
| Power Dissipation-Max (Abs) |
1 W
|
1 W
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
CECC
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
4000 MHz
|
4000 MHz
|
| Base Number Matches |
1
|
4
|
|
|
|
Compare BFG35,115 with alternatives