BFG621
vs
BFG621TRL
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.15 A
|
0.15 A
|
| Collector-Emitter Voltage-Max |
15 V
|
15 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
1 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
8000 MHz
|
8000 MHz
|
| Base Number Matches |
3
|
2
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G4
|
|
|
|