BFQ163
vs
2SC5631
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
HITACHI LTD
|
| Package Description |
CYLINDRICAL, O-MBCY-W3
|
SMALL OUTLINE, R-PSSO-F3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.5 A
|
0.08 A
|
| Collector-Emitter Voltage-Max |
10 V
|
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE
|
| DC Current Gain-Min (hFE) |
25
|
80
|
| JEDEC-95 Code |
TO-39
|
|
| JESD-30 Code |
O-MBCY-W3
|
R-PSSO-F3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
FLAT
|
| Terminal Position |
BOTTOM
|
SINGLE
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
1000 MHz
|
8000 MHz
|
| Base Number Matches |
1
|
1
|
| Pin Count |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
0.8 W
|
|
|
|
Compare BFQ163 with alternatives
Compare 2SC5631 with alternatives