BFQ251-T/R
vs
BFQ251T/R
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
PHILIPS SEMICONDUCTORS
|
| Package Description |
CYLINDRICAL, O-PBCY-T3
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
HIGH RELIABILITY
|
|
| Collector Current-Max (IC) |
0.3 A
|
0.3 A
|
| Collector-Base Capacitance-Max |
2 pF
|
|
| Collector-Emitter Voltage-Max |
65 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
20
|
20
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
|
| JEDEC-95 Code |
TO-92
|
|
| JESD-30 Code |
O-PBCY-T3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
ROUND
|
|
| Package Style |
CYLINDRICAL
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation Ambient-Max |
1 W
|
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
CECC
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
BOTTOM
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
1300 MHz
|
1000 MHz
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
No
|
| ECCN Code |
|
EAR99
|
| JESD-609 Code |
|
e0
|
| Power Dissipation-Max (Abs) |
|
1 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
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