BFR193E6327 vs BFG520WT/R feature comparison

BFR193E6327 Rochester Electronics LLC

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BFG520WT/R NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC NXP SEMICONDUCTORS
Reach Compliance Code unknown unknown
Collector Current-Max (IC) 0.08 A 0.07 A
Collector-Base Capacitance-Max 1 pF
Collector-Emitter Voltage-Max 12 V
Configuration SINGLE SINGLE
Highest Frequency Band ULTRA HIGH FREQUENCY BAND L BAND
JESD-30 Code R-PDSO-G3 R-PDSO-G4
JESD-609 Code e3 e3
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 4
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN NPN
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 8000 MHz 9000 MHz
Base Number Matches 3 2
ECCN Code EAR99
Additional Feature LOW NOISE, HIGH RELIABILITY
Case Connection COLLECTOR
DC Current Gain-Min (hFE) 60
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.5 W

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