BFR193L3
vs
BFR541
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
NXP SEMICONDUCTORS
|
| Package Description |
CHIP CARRIER, R-XBCC-N3
|
DISK BUTTON, O-CRDB-F4
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW NOISE
|
LOW NOISE, HIGH RELIABILITY
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
0.08 A
|
0.12 A
|
| Collector-Base Capacitance-Max |
0.9 pF
|
|
| Collector-Emitter Voltage-Max |
12 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
70
|
60
|
| Highest Frequency Band |
L BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
R-XBCC-N3
|
O-CRDB-F4
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
4
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Package Body Material |
UNSPECIFIED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
CHIP CARRIER
|
DISK BUTTON
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.58 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Matte Tin (Sn)
|
|
| Terminal Form |
NO LEAD
|
FLAT
|
| Terminal Position |
BOTTOM
|
RADIAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
8000 MHz
|
9000 MHz
|
| Base Number Matches |
1
|
3
|
| HTS Code |
|
8541.21.00.75
|
| Power Dissipation Ambient-Max |
|
0.65 W
|
|
|
|
Compare BFR193L3 with alternatives
Compare BFR541 with alternatives