BFR193WH6327XTSA1
vs
BFR193W
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
SIEMENS A G
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Infineon
|
|
Additional Feature |
LOW NOISE
|
|
Collector Current-Max (IC) |
0.08 A
|
0.08 A
|
Collector-Base Capacitance-Max |
1 pF
|
1 pF
|
Collector-Emitter Voltage-Max |
12 V
|
12 V
|
Configuration |
SINGLE
|
SINGLE
|
Highest Frequency Band |
L BAND
|
ULTRA HIGH FREQUENCY BAND
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
NPN
|
NPN
|
Reference Standard |
AEC-Q101
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Transition Frequency-Nom (fT) |
8000 MHz
|
8000 MHz
|
Base Number Matches |
1
|
2
|
Power Gain-Min (Gp) |
|
13.5 dB
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare BFR193WH6327XTSA1 with alternatives
Compare BFR193W with alternatives