BFR90
vs
NE68830-T1
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
CALIFORNIA EASTERN LABORATORIES
|
| Package Description |
DISK BUTTON, O-PRDB-F3
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
NXP
|
|
| Additional Feature |
LOW NOISE
|
LOW NOISE
|
| Collector Current-Max (IC) |
0.025 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
15 V
|
6 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
C BAND
|
| JESD-30 Code |
O-PRDB-F3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
DISK BUTTON
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
CECC
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
GULL WING
|
| Terminal Position |
RADIAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
5000 MHz
|
9000 MHz
|
| Base Number Matches |
3
|
1
|
| Collector-Base Capacitance-Max |
|
0.85 pF
|
| DC Current Gain-Min (hFE) |
|
80
|
| Operating Temperature-Max |
|
150 °C
|
|
|
|
Compare BFR90 with alternatives
Compare NE68830-T1 with alternatives