Register or Sign In

BFS17WH6327XTSA1 vs BFS17W,115 feature comparison

BFS17WH6327XTSA1 Infineon Technologies AG

Buy Now Datasheet

BFS17W,115 NXP Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 0.025 A 0.05 A
Collector-Base Capacitance-Max 0.8 pF 1.5 pF
Collector-Emitter Voltage-Max 15 V 15 V
Configuration SINGLE SINGLE
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type NPN NPN
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 2500 MHz 1600 MHz
Base Number Matches 1 1
Part Package Code SC-70
Pin Count 3
Manufacturer Package Code SOT323
HTS Code 8541.21.00.75
DC Current Gain-Min (hFE) 25
Operating Temperature-Max 175 °C
Power Dissipation Ambient-Max 0.3 W
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Transistors » RF Small Signal Bipolar Transistors
Transistors » RF Small Signal Bipolar Transistors

Compare BFS17WH6327XTSA1 with alternatives

Compare BFS17W,115 with alternatives