BFW12 vs SI1031R-T1-GE3 feature comparison

BFW12 North American Philips Discrete Products Div

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SI1031R-T1-GE3 Vishay Intertechnologies

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Rohs Code No Yes
Part Life Cycle Code Transferred End Of Life
Ihs Manufacturer NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV VISHAY INTERTECHNOLOGY INC
Package Description , HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
FET Technology JUNCTION METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e3
Operating Temperature-Max 175 °C 150 °C
Polarity/Channel Type N-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 0.15 W 0.28 W
Surface Mount NO YES
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Base Number Matches 3 2
Factory Lead Time 6 Weeks
Samacsys Manufacturer Vishay
Additional Feature LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.14 A
Drain-source On Resistance-Max 8 Ω
JESD-30 Code R-PDSO-G3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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