BLF6G22LS-130,112
vs
BLF8G22LS-140J
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
AMPLEON NETHERLANDS B V
|
NXP SEMICONDUCTORS
|
| Package Description |
ROHS COMPLIANT, CERAMIC PACKAGE-2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
SOURCE
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
65 V
|
|
| Drain Current-Max (ID) |
34 A
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Highest Frequency Band |
S BAND
|
|
| JESD-30 Code |
R-CDFP-F2
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLATPACK
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Reference Standard |
IEC-60134
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
2
|
2
|
| Part Package Code |
|
SOT
|
| Pin Count |
|
2
|
| Manufacturer Package Code |
|
SOT502B
|
| Operating Temperature-Max |
|
225 °C
|
|
|
|
Compare BLF6G22LS-130,112 with alternatives