BS250P vs SI1031R-T1-GE3 feature comparison

BS250P Plessey Semiconductors Ltd

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SI1031R-T1-GE3 Vishay Siliconix

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Part Life Cycle Code Transferred End Of Life
Ihs Manufacturer PLESSEY SEMICONDUCTORS DISCRETE COMPONENTS DIV VISHAY SILICONIX
Package Description , SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Base Number Matches 3 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code SC-75A
Pin Count 3
Samacsys Manufacturer Vishay
Additional Feature LOW THRESHOLD
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.14 A
Drain-source On Resistance-Max 8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.28 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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