BSC011N03LSI
vs
EPC2023ENGR
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Contact Manufacturer
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
EFFICIENT POWER CONVERSION CORP
|
| Pin Count |
8
|
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Infineon
|
|
| Avalanche Energy Rating (Eas) |
100 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
37 A
|
60 A
|
| Drain-source On Resistance-Max |
0.0015 Ω
|
0.0013 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-F5
|
R-XXUC-X30
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
5
|
30
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
UNCASED CHIP
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
96 W
|
|
| Pulsed Drain Current-Max (IDM) |
400 A
|
590 A
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
|
| Terminal Finish |
Tin (Sn)
|
|
| Terminal Form |
FLAT
|
UNSPECIFIED
|
| Terminal Position |
DUAL
|
UNSPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
GALLIUM NITRIDE
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
UNCASED CHIP, R-XXUC-X30
|
|
|
|
Compare BSC011N03LSI with alternatives
Compare EPC2023ENGR with alternatives