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Part Details for BSC011N03LSI by Infineon Technologies AG
Overview of BSC011N03LSI by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC011N03LSI
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-BSC011N03LSI
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Mouser Electronics | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS RoHS: Compliant | 12592 |
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$0.7810 / $1.7100 | Buy Now |
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Bristol Electronics | 300 |
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RFQ | ||
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Quest Components | 37 A, 30 V, 0.0015 ohm, N-CHANNEL, Si, POWER, MOSFET | 240 |
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$1.0780 / $2.1560 | Buy Now |
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Ameya Holding Limited | 30V,1.1mΩ,100A,N-Channel Power MOSFET | 57901 |
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RFQ | |
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Chips Pulse Industry Limited | PG-TDSON-8 MOSFET RoHS Purchase Online, Ship Immediately | 1621 |
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$0.6742 / $0.8312 | Buy Now |
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LCSC | TDSON-8-EP(5x6) MOSFETs ROHS | 1351 |
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$0.7491 / $1.1907 | Buy Now |
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Win Source Electronics | Trans MOSFET N-CH 30V 37A 8-Pin TDSON EP T/R / MOSFET N-CH 30V 37A TDSON-8 | 50000 |
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$1.1310 / $1.6960 | Buy Now |
Part Details for BSC011N03LSI
BSC011N03LSI CAD Models
BSC011N03LSI Part Data Attributes
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BSC011N03LSI
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC011N03LSI
Infineon Technologies AG
Power Field-Effect Transistor, 37A I(D), 30V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 37 A | |
| Drain-source On Resistance-Max | 0.0015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 96 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC011N03LSI
This table gives cross-reference parts and alternative options found for BSC011N03LSI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC011N03LSI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC011N03LS | Power Field-Effect Transistor, 37A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC011N03LSI vs BSC011N03LS |
| EPC2023ENGR | Power Field-Effect Transistor, 60A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-30 | Efficient Power Conversion | BSC011N03LSI vs EPC2023ENGR |
| CSD17559Q5 | 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.5 mOhm 8-VSON-CLIP -55 to 150 | Texas Instruments | BSC011N03LSI vs CSD17559Q5 |
| BSC011N03LSATMA1 | Power Field-Effect Transistor, 37A I(D), 30V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC011N03LSI vs BSC011N03LSATMA1 |