BSC014N04LSIATMA1 vs BSC019N04NSGATMA1 feature comparison

BSC014N04LSIATMA1 Infineon Technologies AG

Buy Now Datasheet

BSC019N04NSGATMA1 Infineon Technologies AG

Buy Now Datasheet
Pbfree Code No No
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F3 GREEN, PLASTIC, TDSON-8
Pin Count 8 8
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 20 Weeks 20 Weeks
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 90 mJ 295 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 166 A 29 A
Drain-source On Resistance-Max 0.002 Ω 0.0019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 180 pF
JESD-30 Code R-PDSO-F8 R-PDSO-F8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 96 W
Pulsed Drain Current-Max (IDM) 780 A 400 A
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Qualification Status Not Qualified
Transistor Application SWITCHING

Compare BSC014N04LSIATMA1 with alternatives

Compare BSC019N04NSGATMA1 with alternatives