BSC093N04LSGATMA1 vs SIR862DP-T1-GE3 feature comparison

BSC093N04LSGATMA1 Infineon Technologies AG

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SIR862DP-T1-GE3 Vishay Intertechnologies

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Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY INTERTECHNOLOGY INC
Part Package Code SON
Package Description SMALL OUTLINE, R-PDSO-F5 HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Pin Count 8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 16 Weeks, 5 Days
Samacsys Manufacturer Infineon Vishay
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 10 mJ 80 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 25 V
Drain Current-Max (ID) 13 A 50 A
Drain-source On Resistance-Max 0.0093 Ω 0.0028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8 R-XDSO-C5
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 196 A 70 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form FLAT C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Power Dissipation-Max (Abs) 69 W

Compare BSC093N04LSGATMA1 with alternatives

Compare SIR862DP-T1-GE3 with alternatives