BSC520N15NS3GXT
vs
BSZ520N15NS3GXT
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Package Description |
SMALL OUTLINE, R-PDSO-F5
|
GREEN, PLASTIC, TSDSON-8
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
18 Weeks
|
18 Weeks
|
Avalanche Energy Rating (Eas) |
60 mJ
|
60 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
150 V
|
150 V
|
Drain Current-Max (ID) |
21 A
|
21 A
|
Drain-source On Resistance-Max |
0.052 Ω
|
0.052 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-N8
|
S-PDSO-N8
|
Number of Elements |
1
|
1
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
57 W
|
|
Pulsed Drain Current-Max (IDM) |
84 A
|
84 A
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
|
|
|
Compare BSC520N15NS3GXT with alternatives
Compare BSZ520N15NS3GXT with alternatives