BSF045N03MQ3G
vs
BSZ0904NSIATMA1
feature comparison
| Pbfree Code |
Yes
|
No
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
CHIP CARRIER, R-MBCC-N2
|
SMALL OUTLINE, R-PDSO-N3
|
| Pin Count |
2
|
8
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
30 mJ
|
20 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
18 A
|
18 A
|
| Drain-source On Resistance-Max |
0.0059 Ω
|
0.0057 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-MBCC-N2
|
R-PDSO-N8
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
28 W
|
37 W
|
| Pulsed Drain Current-Max (IDM) |
252 A
|
160 A
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
16 Weeks, 3 Days
|
| Samacsys Manufacturer |
|
Infineon
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Terminal Finish |
|
Tin (Sn)
|
|
|
|
Compare BSF045N03MQ3G with alternatives
Compare BSZ0904NSIATMA1 with alternatives