BSF045N03MQ3G
vs
FDS7068SN3
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
FAIRCHILD SEMICONDUCTOR CORP
|
Package Description |
CHIP CARRIER, R-MBCC-N2
|
SMALL OUTLINE, R-PDSO-G8
|
Pin Count |
2
|
8
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
30 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
18 A
|
19 A
|
Drain-source On Resistance-Max |
0.0059 Ω
|
0.0055 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-MBCC-N2
|
R-PDSO-G8
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
METAL
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
28 W
|
3 W
|
Pulsed Drain Current-Max (IDM) |
252 A
|
60 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
NO LEAD
|
GULL WING
|
Terminal Position |
BOTTOM
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
SOT
|
JESD-609 Code |
|
e0
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare BSF045N03MQ3G with alternatives
Compare FDS7068SN3 with alternatives