BSH103T/R
vs
MMBF0201NLT3
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NEXPERIA
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
,
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
|
| Date Of Intro |
2017-02-01
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
Single
|
| DS Breakdown Voltage-Min |
30 V
|
|
| Drain Current-Max (ID) |
0.85 A
|
|
| Drain-source On Resistance-Max |
0.5 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G3
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
3
|
4
|
| Drain Current-Max (Abs) (ID) |
|
0.3 A
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
0.225 W
|
|
|
|
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