BSM25GD120DN2E3224
vs
MG25Q6ES50A
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SIEMENS A G
|
TOSHIBA CORP
|
| Package Description |
FLANGE MOUNT, R-CUFM-T17
|
FLANGE MOUNT, R-XUFM-X17
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
8541.29.00.95
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Collector Current-Max (IC) |
35 A
|
35 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
|
| Fall Time-Max (tf) |
100 ns
|
300 ns
|
| Gate-Emitter Thr Voltage-Max |
6.5 V
|
6 V
|
| Gate-Emitter Voltage-Max |
20 V
|
20 V
|
| JESD-30 Code |
R-CUFM-T17
|
R-XUFM-X17
|
| Number of Elements |
6
|
6
|
| Number of Terminals |
17
|
17
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
1200 W
|
200 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rise Time-Max (tr) |
130 ns
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
UNSPECIFIED
|
| Terminal Position |
UPPER
|
UPPER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
600 ns
|
|
| Turn-off Time-Nom (toff) |
400 ns
|
600 ns
|
| Turn-on Time-Max (ton) |
150 ns
|
|
| Turn-on Time-Nom (ton) |
75 ns
|
150 ns
|
| VCEsat-Max |
3 V
|
3.6 V
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
HIGH SPEED
|
| Power Dissipation-Max (Abs) |
|
200 W
|
| Transistor Application |
|
MOTOR CONTROL
|
|
|
|
Compare BSM25GD120DN2E3224 with alternatives
Compare MG25Q6ES50A with alternatives