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Transistors IGBTs BSM25GD120DN2E3224

BSM25GD120DN2E3224
Description: Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel

Overview of BSM25GD120DN2E3224 by Siemens

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 8 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for BSM25GD120DN2E3224 by Siemens
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Part Data Attributes for BSM25GD120DN2E3224 by Siemens
Parametric Data

BSM25GD120DN2E3224
Siemens
Buy Now
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SIEMENS A G
Package Description
FLANGE MOUNT, R-CUFM-T17
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
ISOLATED
Collector Current-Max (IC)
35 A
Collector-Emitter Voltage-Max
1200 V
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Fall Time-Max (tf)
100 ns
Gate-Emitter Thr Voltage-Max
6.5 V
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-CUFM-T17
Number of Elements
6
Number of Terminals
17
Operating Temperature-Max
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
1200 W
Qualification Status
Not Qualified
Rise Time-Max (tr)
130 ns
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
UPPER
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
600 ns
Turn-off Time-Nom (toff)
400 ns
Turn-on Time-Max (ton)
150 ns
Turn-on Time-Nom (ton)
75 ns
VCEsat-Max
3 V
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  1. BSM25GD120DN2E3224
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    Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
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Alternate Parts for BSM25GD120DN2E3224

This table gives cross-reference parts and alternative options found for BSM25GD120DN2E3224. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM25GD120DN2E3224, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BSM25GD120D2 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, Eupec Gmbh & Co Kg BSM25GD120DN2E3224 vs BSM25GD120D2
MG25Q6ES50A TRANSISTOR 35 A, 1200 V, N-CHANNEL IGBT, 2-108E2A, 17 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM25GD120DN2E3224 vs MG25Q6ES50A
BSM25GD120DN2 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 Infineon Technologies AG BSM25GD120DN2E3224 vs BSM25GD120DN2
MG25Q6ES1 TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components BSM25GD120DN2E3224 vs MG25Q6ES1
CM30TF-24H Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel Mitsubishi Electric BSM25GD120DN2E3224 vs CM30TF-24H
6MBI25F-120 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M616, 19 PIN Fuji Electric Co Ltd BSM25GD120DN2E3224 vs 6MBI25F-120
BSM25GD120DN2E3224 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 Infineon Technologies AG BSM25GD120DN2E3224 vs BSM25GD120DN2E3224
BSM25GD120DN2 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel Siemens BSM25GD120DN2E3224 vs BSM25GD120DN2

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