BSP122-TAPE-13 vs BSP122 feature comparison

BSP122-TAPE-13 NXP Semiconductors

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BSP122 Philips Semiconductors

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NXP SEMICONDUCTORS PHILIPS SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 0.55 A 0.55 A
Drain-source On Resistance-Max 2.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Base Number Matches 1 4
Rohs Code Yes
JESD-609 Code e3
Power Dissipation-Max (Abs) 1.5 W
Terminal Finish Matte Tin (Sn)

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