BSP126TRL13
vs
BSP225T/R
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
250 V
|
|
Drain Current-Max (ID) |
0.3 A
|
0.225 A
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN
|
MATTE TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
3
|
Case Connection |
|
DRAIN
|
Drain-source On Resistance-Max |
|
15 Ω
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
1.5 W
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare BSP126TRL13 with alternatives
Compare BSP225T/R with alternatives