BSP126TRL13 vs BSP225,115 feature comparison

BSP126TRL13 YAGEO Corporation

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BSP225,115 NXP Semiconductors

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer PHILIPS COMPONENTS NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 0.3 A 0.225 A
Drain-source On Resistance-Max 6 Ω 15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL P-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Rohs Code Yes
Part Package Code SC-73
Pin Count 4
Manufacturer Package Code SOT223
HTS Code 8541.29.00.75
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 1.5 W
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

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