BSP126TRL13 vs BSP225135 feature comparison

BSP126TRL13 NXP Semiconductors

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BSP225135 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V 250 V
Drain Current-Max (ID) 0.3 A 0.225 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL P-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Package Description SMALL OUTLINE, R-PDSO-G4
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Drain-source On Resistance-Max 15 Ω
Feedback Cap-Max (Crss) 15 pF
Operating Temperature-Max 150 °C
Transistor Application SWITCHING

Compare BSP126TRL13 with alternatives

Compare BSP225135 with alternatives