BSP30T/R
vs
BSP30
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G4
|
SMALL OUTLINE, R-PDSO-G4
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
1 A
|
1 A
|
| Collector-Base Capacitance-Max |
20 pF
|
20 pF
|
| Collector-Emitter Voltage-Max |
60 V
|
60 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
30
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
2 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
100 MHz
|
| Turn-off Time-Max (toff) |
650 ns
|
650 ns
|
| Turn-on Time-Max (ton) |
500 ns
|
500 ns
|
| VCEsat-Max |
0.5 V
|
0.5 V
|
| Base Number Matches |
3
|
12
|
|
|
|
Compare BSP30T/R with alternatives
Compare BSP30 with alternatives