BSP41T/R
vs
MJD29C-1
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
NEXPERIA
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
,
|
IPAK-3
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2017-02-01
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
1 A
|
1 A
|
| Collector-Emitter Voltage-Max |
60 V
|
100 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
50
|
15
|
| JESD-30 Code |
R-PDSO-G4
|
R-PSIP-T3
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
1.3 W
|
15 W
|
| Reference Standard |
IEC-134
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
3 MHz
|
| VCEsat-Max |
0.5 V
|
0.7 V
|
| Base Number Matches |
1
|
1
|
| Pin Count |
|
3
|
| HTS Code |
|
8541.29.00.95
|
| Power Dissipation Ambient-Max |
|
15 W
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare BSP41T/R with alternatives
Compare MJD29C-1 with alternatives