BSP41TRL13 vs MJD29C-1 feature comparison

BSP41TRL13 NXP Semiconductors

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MJD29C-1 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS SAMSUNG SEMICONDUCTOR INC
Package Description SMALL OUTLINE, R-PDSO-G4 IPAK-3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 1 A 1 A
Collector-Emitter Voltage-Max 60 V 100 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 100 15
JESD-30 Code R-PDSO-G4 R-PSIP-T3
JESD-609 Code e3 e0
Number of Elements 1 1
Number of Terminals 4 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL SINGLE
Transistor Application SWITCHING AMPLIFIER
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 1000 ns
Turn-on Time-Max (ton) 250 ns
VCEsat-Max 0.5 V 0.7 V
Base Number Matches 1 1
Pin Count 3
HTS Code 8541.29.00.95
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 15 W
Power Dissipation-Max (Abs) 15 W
Transition Frequency-Nom (fT) 3 MHz

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