BSP50-T vs BSP51-TAPE-7 feature comparison

BSP50-T Nexperia

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BSP51-TAPE-7 NXP Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Package Description , SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Date Of Intro 2017-02-01
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 1 A 0.5 A
Collector-Emitter Voltage-Max 60 V 60 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 2000 2000
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 1.25 W
Reference Standard IEC-134
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz
VCEsat-Max 1.3 V 1.3 V
Base Number Matches 2 1
Qualification Status Not Qualified

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