BSS119E6327
vs
VN0606M
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
TEMIC SEMICONDUCTORS
|
Part Package Code |
SOT-23
|
|
Package Description |
SMALL OUTLINE, R-PDSO-G3
|
CYLINDRICAL, O-PBCY-W3
|
Pin Count |
3
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
LOW THRESHOLD
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
60 V
|
Drain Current-Max (ID) |
0.17 A
|
0.39 A
|
Drain-source On Resistance-Max |
6 Ω
|
3 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
4.1 pF
|
10 pF
|
JESD-30 Code |
R-PDSO-G3
|
O-PBCY-W3
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
0.36 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
GULL WING
|
WIRE
|
Terminal Position |
DUAL
|
BOTTOM
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Case Connection |
|
DRAIN
|
JEDEC-95 Code |
|
TO-237AA
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare BSS119E6327 with alternatives
Compare VN0606M with alternatives