BSS119L6433HTMA1
vs
XBSS123
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
CALOGIC LLC
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
0.17 A
|
0.17 A
|
| Drain-source On Resistance-Max |
6 Ω
|
6 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
4.1 pF
|
|
| JESD-30 Code |
R-PDSO-G3
|
S-XUUC-N2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
SMALL OUTLINE
|
UNCASED CHIP
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
NO LEAD
|
| Terminal Position |
DUAL
|
UPPER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| HTS Code |
|
8542.90.00.00
|
| Operating Temperature-Max |
|
150 °C
|
| Qualification Status |
|
Not Qualified
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare BSS119L6433HTMA1 with alternatives
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