BSS123 vs BSS123-3L feature comparison

BSS123 Motorola Semiconductor Products

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BSS123-3L Galaxy Microelectronics

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Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MOTOROLA INC CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 0.17 A 0.17 A
Drain-source On Resistance-Max 6 Ω 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4 pF 2.8 pF
JEDEC-95 Code TO-236AA
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 125 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.55 W 0.35 W
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 1
Package Description ,
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation Ambient-Max 0.35 W
Reference Standard MIL-STD-202
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare BSS123-3L with alternatives