BSS123-L99Z vs BSS123 feature comparison

BSS123-L99Z Texas Instruments

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BSS123 North American Philips Discrete Products Div

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 0.17 A 0.15 A
Drain-source On Resistance-Max 10 Ω 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF 4 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 25
Rohs Code No
ECCN Code EAR99
JESD-609 Code e0
Power Dissipation Ambient-Max 0.25 W
Power Dissipation-Max (Abs) 0.25 W
Reference Standard IEC-134
Terminal Finish Tin/Lead (Sn/Pb)

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