BSS123-T
vs
BSS123LT1
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
ONSEMI
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
CASE 318-08, 3 PIN
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
0.15 A
|
0.17 A
|
| Drain-source On Resistance-Max |
6 Ω
|
6 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
10 pF
|
4 pF
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
0.25 W
|
|
| Power Dissipation-Max (Abs) |
0.25 W
|
0.225 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
IEC-134
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
6
|
3
|
| Pbfree Code |
|
No
|
| Part Package Code |
|
SOT-23 (TO-236) 3 LEAD
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
318
|
| Samacsys Manufacturer |
|
onsemi
|
| JEDEC-95 Code |
|
TO-236
|
| JESD-609 Code |
|
e0
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
235
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare BSS123-T with alternatives
Compare BSS123LT1 with alternatives