BSS123TRL13 vs BSS123TRL feature comparison

BSS123TRL13 NXP Semiconductors

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BSS123TRL NXP Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 0.15 A 0.15 A
Drain-source On Resistance-Max 6 Ω 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF 10 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 0.25 W 0.25 W
Power Dissipation-Max (Abs) 0.25 W 0.25 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-134 IEC-134
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
JESD-609 Code e3
Moisture Sensitivity Level 1
Terminal Finish TIN

Compare BSS123TRL13 with alternatives

Compare BSS123TRL with alternatives