BSS123_R2_00001 vs BSS123 feature comparison

BSS123_R2_00001 PanJit Semiconductor

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BSS123 North American Philips Discrete Products Div

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Rohs Code Yes No
Part Life Cycle Code Active Transferred
Ihs Manufacturer PAN JIT INTERNATIONAL INC NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer PANJIT
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 0.17 A 0.15 A
Drain-source On Resistance-Max 6 Ω 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 7.8 pF 4 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 0.5 W 0.25 W
Power Dissipation-Max (Abs) 0.5 W 0.25 W
Reference Standard IEC-61249; MIL-STD-750 IEC-134
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 25
JESD-609 Code e0
Terminal Finish Tin/Lead (Sn/Pb)

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