BSS129E-6296
vs
SP0610TE-6327
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
SIEMENS A G
|
SIEMENS A G
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
240 V
|
60 V
|
| Drain Current-Max (ID) |
0.15 A
|
0.13 A
|
| Drain-source On Resistance-Max |
20 Ω
|
10 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-92
|
|
| JESD-30 Code |
O-PBCY-T3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
DEPLETION MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
|
|
|
Compare BSS129E-6296 with alternatives
Compare SP0610TE-6327 with alternatives